The　Optically　pumped　semiconductor　disk　laser　use　the　InGaAs/GaAs　quantum　structures　as　the　gain　medium,　and　optically　pumped　at　808　nm　by　the　Laser　Diode.　We　have　got　the　fundamental　output　at　1030　nm,　and　its　highest　output　power　is　about　60　mW.　Then,　in　straight　cavity,　we　used　LBO,　KTP,　KNbO3　as　second　harmonic　generation　crystal　respectively,　and　obtain　the　green　laser　with　maximum　power　of　8　mW.　In　folding　cavity,　we　employed　LBO　as　second　harmonic　generation　crystal　and　got　the　laser　at　515　nm　with　it＇s　maximum　power　is　11mW.　The　characteristics　of　these　crystals　were　discussed.　Finally,　we　simulated　the　heat　distribution　of　the　gain　chip　by　finite-element　analysis　method,　and　some　measures　of　improving　heat　spread　and　output　efficiency　of　the　semiconductor　chip.