Design and Fabrication of 980nm Three-Active Regions High Power Semiconductor Lasers - 文章详情页

作者：

Wang, Zhiqun (Wang, Zhiqun.) | Zhang, Lei (Zhang, Lei.) | Cui, Bifeng (Cui, Bifeng.) | Shen, Guangdi (Shen, Guangdi.)

收录：

CPCI-S

摘要：

Based　on　the　principle　of　tunnel　regeneration,　three-active　regions　high　power　semiconductor　lasers　were　designed　and　fabricated　Powered　by　pulse　currents　limited　at　30A,　the　emitting　wavelength　of　998nm,　the　optical　power　output　of　40　48W,　I(th)　of　7　95A　and　the　differential　efficiency　of　1　62W/A　were　obtained

关键词：

AlGaAs/GaAs high power semiconductor laser

作者机构：

[ 1 ] [Wang, Zhiqun]Beijing Univ Technol, Beijing Optoelect Technol Lab, Beijing 100124, Peoples R China
[ 2 ] [Zhang, Lei]Beijing Univ Technol, Beijing Optoelect Technol Lab, Beijing 100124, Peoples R China
[ 3 ] [Cui, Bifeng]Beijing Univ Technol, Beijing Optoelect Technol Lab, Beijing 100124, Peoples R China
[ 4 ] [Shen, Guangdi]Beijing Univ Technol, Beijing Optoelect Technol Lab, Beijing 100124, Peoples R China

通讯作者信息：

[Wang, Zhiqun]Beijing Univ Technol, Beijing Optoelect Technol Lab, Pingleyuan 100, Beijing 100124, Peoples R China

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