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摘要:
Although the resonant cavity light-emitting diodes (RCLEDs) have better thermal behavior comparing with vertical-cavity surface-emitting lasers (VCSELs), the emission intensity and far-field pattern of RCLEDs still depend on the temperature. A conflict exists between the requirement of high optical intensity and increased temperature. The multi-active region RCLEDs with two MQWs connected by a tunnel junction can solve this problem through the over 100% internal quantum efficiency. In this paper, simulations of the optical field and emitted pattern for multi-active region RCLEDs are calculated based on method of transfer matrix and source term, and comparison with single active region RCLEDs is made as well to give a deep insight of multi-active region RCLEDs.
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来源 :
2009 SYMPOSIUM ON PHOTONICS AND OPTOELECTRONICS (SOPO 2009)
年份: 2009
页码: 683-686
语种: 英文
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