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摘要:
A model for analyzing and optimizing the active power, the leakage power and the delay of the domino OR gates with the sleep transistor based on wavelet neural networks in 45 nm CMOS technology is proposed. By studying the impact of the sleep transistor, the model can successfully forecast the nonlinear changing of the active power, the leakage power and the delay of the different inputs domino OR gates. The simulation results for verification indicate that the forecasting model can be well applied in VLSI design with accuracy ratio of more than 90%(1).
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来源 :
2009: 8TH INTERNATIONAL SYMPOSIUM ON TEST AND MEASUREMENT, VOLS 1-6
年份: 2009
页码: 1578-1581
语种: 英文
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