In　this　work,　we　successfully　prepared　epitaxial　beta-Ga2O3　films　with　different　Ta　doping　concentrations　on　SrTiO3(100)　substrates.　XPS　measurement　indicated　that　Ta　mainly　existed　in　the　beta-Ga2O3　lattice　as　+5　valence　state,　and　the　actual　doping　concentration　of　the　Ta　element　were　determined.　XRD　and　TEM　results　proved　the　obtained　films　were　high　quality　beta-Ga2O3　single　crystal　films,　and　the　epitaxial　relationship　between　the　film　and　substrate　was　beta-Ga2O3(100)//SrTiO3(100)　with　beta-Ga2O3　[001]//SrTiO3＜011＞.　The　film　with　0.2%　Ta　doping　concentration　presented　the　highest　Hall　mobility　of　11.9　cm(2)　V-1　s(-1),　whereas　the　lowest　resistivity　was　68.8　Omega　cm　when　the　Ta　concentration　is　1.0%.　By　controlling　the　Ta　concentration,　the　carrier　concentration　of　the　beta-Ga2O3　films　could　be　effectively　regulated　in　the　range　of　4.15　x　10(15)-1.12　x　10(17)　cm(-3).　The　average　transmittances　of　the　films　in　the　visible　light　region　exceeded　95%.