A　compact　and　reconfigurable　low　noise　amplifier　(LNA)　is　proposed　by　combining　an　input　transistor,　composite　transistors　with　Darlington　configuration　as　the　amplification　and　output　transistor,　T-type　structure　composite　resistors　instead　of　a　simplex　structure　resistor,　a　shunt　inductor　feedback　realized　by　a　tunable　active　inductor　(AI),　a　shunt　inductor　peaking　technique　realized　by　another　tunable　AI.　The　division　and　collaboration　among　different　resistances　in　the　T-type　structure　composite　resistor　realize　simultaneously　input　impedance　matching,　output　impedance　matching　and　good　noise　performance;　the　shunt　feedback　and　peaking　technique　using　two　tunable　AIs　not　only　extend　frequency　bandwidth　and　improve　gain　flatness,　but　also　make　the　gain　and　frequency　band　can　be　tuned　simultaneously　by　the　external　bias　of　tunable　AIs;　the　Darlington　configuration　of　composite　transistors　provides　high　gain;　furthermore,　the　adoption　of　the　small　size　AIs　instead　of　large　size　passive　spiral　inductor,　and　the　use　of　composite　resistors　make　the　LNA　have　a　small　size.　The　LNA　is　fabricated　and　verified　by　GaAs/InGaP　hetero-junction　bipolar　transistor　(HBT)　process.　The　results　show　that　at　the　frequency　of　7GHz,　the　gain　S21　is　maximum　and　up　to　19dB;　the　S21　can　be　tuned　from　17dB　to　19dB　by　tuning　external　bias　of　tunable　AIs,　that　is,　the　tunable　amount　of　S21　is　2dB,　and　similarly　at　8GHz;　the　tunable　range　of　3dB　bandwidth　is　1GHz.　In　addition,　the　gain　S21　flatness　is　better　than　0.4dB　under　frequency　from　3.1GHz　to　10.6GHz;　the　size　of　the　LNA　only　has　760μm×1260μm　(including　PADs).　Therefore,　the　proposed　strategies　in　the　paper　provide　a　new　solution　to　the　design　of　small　size　and　reconfigurable　ultra-wideband　(UWB)　LNA　and　can　be　used　further　to　adjust　the　variations　of　gain　and　bandwidth　of　radio　frequency　integrated　circuits　(RFICs)　due　to　package,　parasitic　and　the　variation　of　fabrication　process　and　temperature.　Copyright　©　by　HIGH　TECHNOLOGY　LETTERS　PRESS.