The　high　operating　voltage　and　switching　speed　of　silicon　carbide　(SiC)　MOSFETs　have　significant　impacts　on　parasitic　elements.　This　leads　to　a　limitation　in　the　performance　of　the　devices.　Especially　in　the　bridge-leg　configuration,　the　coupling　of　the　parasitic　elements,　in　the　upper　and　lower　bridge-legs,　produces　knock-on　effects,　which　complicates　the　modeling　development　to　reveal　the　underlying　mechanisms.　This　paper　presents　a　detailed　piecewise　linear　analytical　model　for　bridge-leg　configured　SiC　MOSFETs,　which　takes　into　account　their　characteristics　and　all　parasitic　elements.　The　novelty　of　the　proposed　model　lies　in　the　fact　that　the　critical　parameters　in　each　stage　are　distinguished　flexibly　and　emphatically　according　to　their　influence　weights　to　the　corresponding　main　variables.　Therefore,　the　complexity　of　the　model　which　considers　all　parasitic　elements　is　reduced　but　the　critical　impacts　on　the　switching　processes　are　carefully　kept.　The　turn-on　and　turn-off　processes　are　analyzed　stage-by-stage　in　detail　with　the　derived　critical　parameters　equivalent　circuits,　and　the　mechanism　underlying　how　each　critical　parameter　influences　the　model　is　revealed　individually.　Furthermore,　based　on　this　model,　the　impact　mechanisms　and　trends　of　the　switching　rate　variation,　the　power　loop　attenuation　oscillation,　and　the　driver　loop　crosstalk　phenomenon　for　different　critical　parameters　are　analyzed　emphatically.　Double　pulse　measurements　with　a　600　V/20A　SiC　MOSFETs　based　bridge-leg　test　circuit　are　used　for　the　experimental　verification　of　the　accuracy　of　the　model　and　the　trends　of　the　critical　parameters＇　impacts.　©　2013　IEEE.