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Author:

Wang Xiaolei (Wang Xiaolei.) (Scholars:王晓蕾) | Sun Xupeng (Sun Xupeng.) | Cui Shuainan (Cui Shuainan.) | Yang Qianqian (Yang Qianqian.) | Zhai Tianrui (Zhai Tianrui.) (Scholars:翟天瑞) | Zhao Jinliang (Zhao Jinliang.) | Deng Jinxiang (Deng Jinxiang.) (Scholars:邓金祥) | Ruotolo Antonio (Ruotolo Antonio.)

Indexed by:

PubMed

Abstract:

Hall-effect in semiconductors has wide applications for magnetic field sensing. Yet, a standard Hall sensor retains two problems: its linearity is affected by the non-uniformity of the current distribution; the sensitivity is bias-dependent, with linearity decreasing with increasing bias current. In order to improve the performance, we here propose a novel structure which realizes bias-free, photo-induced Hall sensors. The system consists of a semi-transparent metal Pt and a semiconductor Si or GaAs to form a Schottky contact. We systematically compared the photo-induced Schottky behaviors and Hall effects without net current flowing, depending on various magnetic fields, light intensities and wavelengths of Pt/GaAs and Pt/Si junctions. The electrical characteristics of the Schottky photo-diodes were fitted to obtain the barrier height as a function of light intensity. We show that the open-circuit Hall voltage of Pt/GaAs junction is orders of magnitude lower than that of Pt/Si, and the barrier height of GaAs is smaller. It should be attributed to the surface states in GaAs which block the carrier drifting. This work not only realizes the physical investigations of photo-induced Hall effects in Pt/GaAs and Pt/Si Schottky junctions, but also opens a new pathway for bias-free magnetic sensing with high linearity and sensitivity comparing to commercial Hall-sensors.

Keyword:

photo-induced Hall effect Schottky junction barrier height magnetic sensor

Author Community:

  • [ 1 ] [Wang Xiaolei]College of Physics and Optoelectronics, Faculty of Science, Beijing University of Technology, Beijing 100124, China
  • [ 2 ] [Sun Xupeng]College of Physics and Optoelectronics, Faculty of Science, Beijing University of Technology, Beijing 100124, China
  • [ 3 ] [Cui Shuainan]College of Physics and Optoelectronics, Faculty of Science, Beijing University of Technology, Beijing 100124, China
  • [ 4 ] [Yang Qianqian]College of Physics and Optoelectronics, Faculty of Science, Beijing University of Technology, Beijing 100124, China
  • [ 5 ] [Zhai Tianrui]College of Physics and Optoelectronics, Faculty of Science, Beijing University of Technology, Beijing 100124, China
  • [ 6 ] [Zhao Jinliang]College of Physics and Optoelectronics, Faculty of Science, Beijing University of Technology, Beijing 100124, China
  • [ 7 ] [Deng Jinxiang]College of Physics and Optoelectronics, Faculty of Science, Beijing University of Technology, Beijing 100124, China
  • [ 8 ] [Ruotolo Antonio]Department of Natural Sciences, Florida Polytechnic University, 4700 Research Way, Lakeland, FL 33805, USA

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Source :

Sensors

ISSN: 1424-8220

Year: 2021

Issue: 9

Volume: 21

3 . 9 0 0

JCR@2022

ESI HC Threshold:96

JCR Journal Grade:2

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 7

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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