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作者:

Tian, Hui-Jun (Tian, Hui-Jun.) | Liu, Qiao-Li (Liu, Qiao-Li.) | Yue, Heng (Yue, Heng.) | Hu, An-Qi (Hu, An-Qi.) | Guo, Xia (Guo, Xia.) (学者:郭霞)

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EI CSCD

摘要:

Hybrid graphene/semiconductor phototransistors have attracted great attention because of their ultrahigh responsivity. However, the specific detectivity (D*) for such hybrid phototransistors obtained from source-drain electrodes is assumed to be 1/f noise. In this paper, D* of ~1.82×1011 Jones was achieved from source-gate electrodes. Compared with the same device which was measured from source-drain electrodes, D* was improved by ~500 times. This could be attributed to the carrier trapping and detrapping processes having been screened by the Schottky barrier at the interface. The rise and decay times were 4 ms and 37 ms, respectively. The temporal response speed also correspondingly improved by ~2 orders of magnitude. This work provides an alternative route toward light photodetectors with high specific detectivity and speed. Copyright ©2021 Chinese Optics. All rights reserved.

关键词:

Electrodes Graphene Phototransistors Refractory metal compounds Schottky barrier diodes

作者机构:

  • [ 1 ] [Tian, Hui-Jun]Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing; 100124, China
  • [ 2 ] [Tian, Hui-Jun]School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing; 100876, China
  • [ 3 ] [Liu, Qiao-Li]School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing; 100876, China
  • [ 4 ] [Yue, Heng]School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing; 100876, China
  • [ 5 ] [Hu, An-Qi]School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing; 100876, China
  • [ 6 ] [Guo, Xia]School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing; 100876, China

通讯作者信息:

  • [hu, an-qi]school of electronic engineering, beijing university of posts and telecommunications, beijing; 100876, china

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来源 :

Chinese Optics

ISSN: 2095-1531

年份: 2021

期: 1

卷: 14

页码: 206-212

被引次数:

WoS核心集被引频次: 0

SCOPUS被引频次: 6

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