Grinding　force　is　a　crucial　factor　that　affects　the　machining　accuracy,　wheel　wear　and　the　material　removal　efficiency　for　precision　machining　of　semiconductor　materials　under　nanometer　accuracy.　However,　due　to　the　complex　rotational　motion　of　both　the　grinding　wheel　and　wafer　workpiece,　in　situ　measurement　of　the　grinding　force　in　wafer　self-rotating　grinding　is　still　a　big　challenge.　In　this　paper,　a　novel　grinding　force　measurement　method　in　silicon　wafer　grinding　process　is　developed.　The　method　is　achieved　by　embedding　four　thin　film　force　sensors　into　a　self-designed　force　measurement　device　and　real-time　monitoring　through　wireless　signal　transmission.　Based　on　this　method,　the　grinding　force　under　5　groups　of　process　parameters　are　measured.　For　the　first　time,　the　variations　of　grinding　force　during　the　whole　grinding　process　are　revealed　real-timely.　Effects　of　process　parameters,　i.e.　spindle　rotational　speed　and　feed　rate,　on　grinding　force　are　investigated,　and　the　parameters　are　also　optimized　based　on　the　theory　of　specific　grinding　energy.　The　test　results　show　that　the　force　measurement　method　has　the　advantages　of　high　precision,　reliable　and　convenient　implementation.　(C)　2020　Elsevier　Ltd.　All　rights　reserved.