Here,　we　fabricated　In2O3(ZnO)(m)　(IZO)　superlattice　microplates　with　hexagon　morphologies　by　the　substrate-free　optical　vapor　supersaturated　precipitation.　The　IZO　microplates　possessed　a　superlattice　structure　with　a　large　m　number,　i.e.,　m　=　23,　consisting　of　layered　alternating　stacks　of　octahedral　InO2-　as　inversion　boundaries　and　layered　InZnmOm+1+　as　a　zig-zag　modulated　pattern.　The　Raman　peak　at　613　cm(-1)　confirmed　the　superlattice　of　the　IZO　microplates.　The　broad　asymmetric　excitonic　photoluminescence　(PL)　emission　with　the　photon　energy　of　3.236　eV　indicated　the　heavy　doping　of　indium　in　the　IZO,　resulting　a　redshift　of　similar　to　32　meV　from　the　near-band-edge　emission.　The　unusual　negative　thermal　quenching　of　PL　intensity　was　also　observed.　Moreover,　the　anisotropic　electrical　properties　of　the　IZO　superlattice　microplates　were　manifested,　for　the　first　time,　where　the　in-plane　conductivity　was　two　orders　of　magnitude　higher　than　out-plane　one.　The　present　work　provided　new　insight　into　the　free-standing　IZO　superlattice　microdevices　for　future　optoelectronic　applications.