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[期刊论文]

Simulation of the influence of gain and SESAM on characteristics of mode-locked VECSELs

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Author:

Zhang, Yiwei (Zhang, Yiwei.) | Hua, Lingling (Hua, Lingling.) | Zhuang, Bihui (Zhuang, Bihui.) | Unfold

Indexed by:

EI

Abstract:

Vertical external cavity surface-emitting lasers (VECSELs) have unique properties such as excellent beam quality, high average output power, and high repetition rate. Short pulses from VECSELs, especially picosecond and femtosecond, can be achieved by a passive mode-locking mechanism with a semiconductor saturable absorber mirror (SESAM). We theoretically simulate the pulse evolution dynamics in VECSELs and investigate the influences of different parameters of gain and SESAM on pulse characteristics. To the best of our knowledge, this is the first time that the influences of fast recovery time and two-photon absorption coefficient on pulse characteristics have been studied. © 2021 Optical Society of America

Keyword:

Surface emitting lasers Passive mode locking Semiconductor saturable absorber mirrors Ultrafast lasers Two photon processes

Author Community:

  • [ 1 ] [Zhang, Yiwei]College of Physics and Optoelectronics, Faculty of Science, Beijing University of Technology, Beijing, China
  • [ 2 ] [Hua, Lingling]College of Physics and Optoelectronics, Faculty of Science, Beijing University of Technology, Beijing, China
  • [ 3 ] [Zhuang, Bihui]College of Physics and Optoelectronics, Faculty of Science, Beijing University of Technology, Beijing, China
  • [ 4 ] [Tian, Jinrong]College of Physics and Optoelectronics, Faculty of Science, Beijing University of Technology, Beijing, China
  • [ 5 ] [Song, Yanrong]College of Physics and Optoelectronics, Faculty of Science, Beijing University of Technology, Beijing, China

Reprint Author's Address:

  • 宋晏蓉

    [song, yanrong]college of physics and optoelectronics, faculty of science, beijing university of technology, beijing, china

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Source :

Applied Optics

ISSN: 1559-128X

Year: 2021

Issue: 9

Volume: 60

Page: 2537-2542

1 . 9 0 0

JCR@2022

ESI HC Threshold:72

JCR Journal Grade:3

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 2

30 Days PV: 0

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