In　this　paper,　we　take　advantage　of　the　high　sensitivity　of　two-dimensional　electron　gas　concentration　in　the　heterojunction　channel　of　a　GaN　high　electron　mobility　transistor　(HEMT)　to　device　surface　states　and　gate　voltages.　By　integrating　a　HEMT　with　ferroelectric　materials　with　photovoltaic　effects,　a　photo-sensitive　gate　HEMT　photodetector　based　on　ferroelectric　integration　is　obtained.　By　exploring　the　ferroelectric　and　composite　film　sputtering　growth　epitaxial　atmosphere,　a　high-performance　PZT/ZnO　composite　ferroelectric　film　grown　in　an　oxygen-containing　atmosphere　is　obtained.　Comparing　the　PZT　and　LiNbO3　(LN)　ferroelectric　thin　films　prepared　with　or　without　the　buffer　layer,　the　following　conclusions　are　obtained.　The　quantum　efficiency　of　the　PZT/ZnO　film　increases　by　240%　and　596%　at　the　peak　of　300-400　nm,　reaching　14.55%;　the　residual　polarization　of　the　PZT　film　obtained　in　an　oxygen-containing　atmosphere　reaches　52.31　μC/cm2;　the　PZT/ZnO　composite　film　has　better　fatigue　characteristics.　The　GaN　HEMT　detector　prepared　by　using　magnetron　sputtered　PZT/ZnO　as　the　sensing　gate　under　the　oxygen　atmosphere　has　a　photocurrent　increment　of　11.51　mA　under　ultraviolet　light　and　a　responsivity　of　111A/W　at　365　nm.　At　the　same　time,　the　device　has　τr　=　0.12　s　and　τf　=　8.3　s　transient　response.　Theresearch　in　this　paper　shows　that　a　new　structure　photodetector　based　on　a　GaN　HEMT　has　excellent　ultraviolet　light　response,　which　provides　a　new　research　direction　for　the　light　detection　mechanism.　©　2021　Author(s).