Semiconductor　nanolaser　has　important　research　value　and　wide　applications　in　many　fields.　However,　it　is　still　a　challenge　to　obtain　a　nanolaser　with　tunability　and　high　intensity　at　the　nanoscale.　Here,　we　report　on　lasers　with　two　modes　of　emission　wavelengths　operating　in　near-infrared　of　nanohole　filled　with　Co
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Ga0.6-xZnSe0.4　nanoparticle　arrays　at　room　temperature.　The　nanohole　arrays　are　drawn　on　the　photoresist　by　using　the　method　of　three-beam　laser　interferometric　etching.　Graphene　with　graphite　which　is　coated　on　nanohole　arrays　is　conducted　by　pulsed　laser　deposition　(PLD)　to　construct　the　cavity.　The　Co
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Ga0.6-xZnSe0.4　nanoparticles　are　filled　into　the　nanohole　acting　laser　gain　medium　via　the　magnetic　traction　nanofilling　technology.　The　results　show　that　the　laser　at　868　and　903　nm　is　radiated,　which　can　be　tuned　by　changing　the　concentration　and　position　of　the　filled　nanoparticles　in　terms　of　wavelength　and　intensity.　The　nanolasers　based　on　this　approach　represent　an　advantageous　alternative　to　other　design　and　fabrication　methods.　This　nanoparticle　nanolasers　can　be　used　in　a　micronano　light　source　of　an　intelligent　photonic　chip.