收录:
摘要:
Hexagonal tantalum pentoxide (δ-Ta2O5) epitaxial films were successfully prepared on Y-stabilized ZrO2 (YSZ) (111) substrates by metalorganic chemical vapor deposition. The crystal structure and optical characteristics of the deposited films as a function of the substrate temperature were investigated. High quality stoichiometric single-crystalline δ-Ta2O5 film was gained at the optimum epitaxial growth temperature of 800 °C and the full-width at half-maximum of the ω rocking curve of δ-Ta2O5 (0001) was only 0.066°. The heteroepitaxial relationship between the δ-Ta2O5 film and YSZ (111) substrate was identified as δ-Ta2O5 (0001)YSZ (111) with δ-Ta2O5 [21¯1¯0YSZ [101‾] and was illustrated in a schematic diagram. This proposed film makes adequate preparations for developing a range of ultra wide band gap semiconductor devices. © 2020
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通讯作者信息:
来源 :
Ceramics International
ISSN: 0272-8842
年份: 2021
期: 4
卷: 47
页码: 5510-5514
5 . 2 0 0
JCR@2022
ESI学科: MATERIALS SCIENCE;
ESI高被引阀值:116
JCR分区:1
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