Nano-laser　has　a　widely　application　in　many　fields　such　as　biosensors,　quantum　memory,　energy　harvesting,　photonic　applications.　However,　there　are　still　some　problems　in　current　preparation　process　of　nano-laser　device　such　as　complex　fabrication　methods　and　high　cost.　Meanwhile,　the　size　of　nano-lasers　has　always　been　a　challenge　in　the　fabrication,　and　single-layer　nano-film　lasers　have　rarely　been　reported.　Here,　we　propose　a　method　of　three　beams　laser　interference　ablation　on　Ga0.1Co0.5ZnSe0.4　film.　The　nanohole　arrays　with　a　period　of　1　μm　are　fabricated.　The　film　of　Ga0.1Co0.5ZnSe0.4　used　for　ablation　is　prepared　via　Pulse　Laser　Deposition　(PLD)　technology.　Then,　the　structure　and　components　of　the　film　are　characterized　by　X-Ray　Diffraction　(XRD)　and　Raman　spectrum.　The　real　existence　and　chemical　valence　state　of　the　Co,　Ga,　Zn　and　Se　elements　are　proved　by　X-Ray　Photoelectron　Spectroscopy　(XPS).　The　stoichiometry　of　thin　film　is　confirmed　by　X-Ray　Fluorescence　Spectrometer　(XRF).　The　morphology　and　cross　section　of　the　nanohole　arrays　is　demonstrated　by　Scanning　Electron　Microscope　(SEM),　illustrating　the　depth　of　hole　around　760　nm.　To　gain　more　understanding　about　the　laser　emission,　the　single-layer　film　with　nanohole　structure　is　simulated　by　Finite　Difference　Time　Domain　(FDTD)　solutions.　Finally,　the　PL　spectrum　reveals　a　903　nm-laser　emission　at　near-infrared.　All　the　results　show　that　a　simple,　efficient　and　low-cost　single-layer　nano　laser　film　is　presented.　©　2020