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作者:

Shen, Rongzong (Shen, Rongzong.) | Sun, Zongheng (Sun, Zongheng.) | Shi, Yanbin (Shi, Yanbin.) | Zhou, Yurong (Zhou, Yurong.) | Guo, Wanwu (Guo, Wanwu.) | Zhou, Yuqin (Zhou, Yuqin.) | Yan, Hui (Yan, Hui.) | Liu, Fengzhen (Liu, Fengzhen.)

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摘要:

Hybrid heterojunction solar cells (HHSCs) using crystalline Si nanowires (SiNWs) as the absorber and conducting polymer poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as the hole-selective transport layer (HTL) show great potential in both low-cost and high-power conversion efficiency (PCE). However, due to the poor wettability of the PEDOT:PSS solution on SiNWs, conformal coverage of PEDOT:PSS on SiNWs is not easy to achieve. Here, an effective method was developed to decrease the surface tension of the PEDOT:PSS and increase the wettability between PEDOT:PSS and SiNWs by incorporating organosilane into the PEDOT:PSS solution. Two kinds of organosilanes including tetramethoxysilane (TMOS) and vinyltrimethoxysilane (VTMO) were selected as the additives. The surface passivation quality of the SiNWs was dramatically enhanced. The HHSCs utilizing VTMO as the additive show a higher open circuit voltage and higher PCE compared with the TMOS adding ones. By spin-coating Ag nanowires onto the PEDOT:PSS HTL layer and using spin-coated phenyl-C61-butyric acid methyl ester as the electron-selective transport layer, a champion PCE up to 18.12% and a fill factor of 80.1% have been achieved on the full solution processed PEDOT:PSS/n-type SiNWs HHSCs. The findings provide a simple and promising method to achieve high-performance PEDOT:PSS/SiNWs HHSCs.

关键词:

tetramethoxysilane interface passivation full solution process silicon nanowires vinyltrimethoxysilane PEDOT:PSS/Si hybrid heterojunction solar cells

作者机构:

  • [ 1 ] [Shen, Rongzong]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
  • [ 2 ] [Sun, Zongheng]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
  • [ 3 ] [Shi, Yanbin]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
  • [ 4 ] [Zhou, Yurong]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
  • [ 5 ] [Zhou, Yuqin]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
  • [ 6 ] [Liu, Fengzhen]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
  • [ 7 ] [Shen, Rongzong]Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
  • [ 8 ] [Sun, Zongheng]Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
  • [ 9 ] [Shi, Yanbin]Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
  • [ 10 ] [Zhou, Yurong]Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
  • [ 11 ] [Zhou, Yuqin]Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
  • [ 12 ] [Liu, Fengzhen]Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
  • [ 13 ] [Guo, Wanwu]Jetion Solar China Co Ltd, Jiangyin 214443, Peoples R China
  • [ 14 ] [Yan, Hui]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China

通讯作者信息:

  • [Zhou, Yurong]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China;;[Liu, Fengzhen]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China;;[Zhou, Yurong]Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China;;[Liu, Fengzhen]Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China

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来源 :

ACS NANO

ISSN: 1936-0851

年份: 2021

期: 4

卷: 15

页码: 6296-6304

1 7 . 1 0 0

JCR@2022

ESI学科: CHEMISTRY;

ESI高被引阀值:96

JCR分区:1

被引次数:

WoS核心集被引频次: 24

SCOPUS被引频次:

ESI高被引论文在榜: 0 展开所有

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