As　core　components　of　power　converters,　the　insulated　gate　bipolar　transistor　(IGBT)　module　is　required　to　have　long-term　reliability　in　increasingly　more　applications.　To　assess　and　improve　the　reliability,　power　cycling　(PC)　tests　are　conducted　to　determine　the　lifetime　of　IGBT　modules;　these　tests　are　very　time-consuming　and　may　take　a　couple　of　weeks　or　even　months　for　a　single　sample.　Therefore,　an　urgent　need　in　the　industrial　community　is　to　develop　an　accurate　and　efficient　method　to　predict　the　lifetime　of　the　IGBT　modules.　In　this　article,　we　present　a　lifetime　prediction　method,　in　which　the　self-accelerating　effect　of　bond　wire　damage　on　the　lifetime　is　considered　by　using　the　feedback　from　the　collector-emitter　ON-resistance　degradation　into　the　power　loss　model,　and　a　degradation　model　is　proposed　to　describe　the　degradation　process　of　the　collector-emitter　ON-resistance.　Base　on　the　physical　PC　tests　of　IGBT　modules,　we　demonstrate　that　the　proposed　method　accurately　and　efficiently　predicts　the　lifetime　of　IGBT　modules.