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Author:

Gong, Wei (Gong, Wei.) | Wang, Peng (Wang, Peng.) | Dai, Dichao (Dai, Dichao.) | Liu, Zekang (Liu, Zekang.) | Zheng, Leyin (Zheng, Leyin.) | Zhang, Yongzhe (Zhang, Yongzhe.) (Scholars:张永哲)

Indexed by:

EI

Abstract:

In recent years, colloidal quantum dots (CQDs) have been widely used in optoelectronic devices due to their advantages including low cost, solution processability, substrate compatibility, and easily tuned photoelectric characteristicsviathe quantum size effect. However, there are several factors still limiting the further improvement of performances for CQD optoelectronic devices: (1) the incomplete surface passivation of CQDs; (2) a trade-off between absorption and photogenerated carrier collection; and (3) the poor air stability. This review focuses on the methods for performance improvement of CQD-based photoelectric conversion devices including photovoltaic solar cells and photodetectors. Taking CQD solar cells as an example, different surface passivation methods are summarized. To increase the separation and collection of photogenerated carriers, the device architecture is optimized by aligning the energy band and broadening the depletion width. Additionally, device performance can be further enhanced through interface modification which could decrease recombination. In the next section, recent progress in the development of CQD near-infrared (NIR), short-wave infrared (SWIR), and mid-wave infrared (MWIR) photodetectors is reviewed. To overcome the traditional photodetection limitations posed by the dark current/sensitivity/bandwidth trade-off, innovative device architectures are developed. Finally, this review discusses the application of CQD photodetectors in infrared imaging. © The Royal Society of Chemistry 2021.

Keyword:

Nanocrystals Economic and social effects Infrared radiation Passivation Semiconductor quantum dots Dark currents Photons Sols Photoelectricity Infrared devices Photodetectors Thermography (imaging) Solar cells

Author Community:

  • [ 1 ] [Gong, Wei]Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing; 100124, China
  • [ 2 ] [Gong, Wei]The Key Laboratory of Advanced Functional Materials, Ministry of Education of China, Beijing; 100124, China
  • [ 3 ] [Wang, Peng]Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing; 100124, China
  • [ 4 ] [Wang, Peng]The Key Laboratory of Advanced Functional Materials, Ministry of Education of China, Beijing; 100124, China
  • [ 5 ] [Dai, Dichao]Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing; 100124, China
  • [ 6 ] [Dai, Dichao]The Key Laboratory of Advanced Functional Materials, Ministry of Education of China, Beijing; 100124, China
  • [ 7 ] [Liu, Zekang]Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing; 100124, China
  • [ 8 ] [Liu, Zekang]The Key Laboratory of Advanced Functional Materials, Ministry of Education of China, Beijing; 100124, China
  • [ 9 ] [Zheng, Leyin]Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing; 100124, China
  • [ 10 ] [Zhang, Yongzhe]Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing; 100124, China
  • [ 11 ] [Zhang, Yongzhe]The Key Laboratory of Advanced Functional Materials, Ministry of Education of China, Beijing; 100124, China

Reprint Author's Address:

  • 张永哲

    [zhang, yongzhe]the key laboratory of advanced functional materials, ministry of education of china, beijing; 100124, china;;[zhang, yongzhe]faculty of materials and manufacturing, beijing university of technology, beijing; 100124, china

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Source :

Journal of Materials Chemistry C

ISSN: 2050-7534

Year: 2021

Issue: 9

Volume: 9

Page: 2994-3025

6 . 4 0 0

JCR@2022

ESI HC Threshold:116

JCR Journal Grade:1

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 19

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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