Femtosecond　laser　has　been　widely　utilized　for　modification　of　crystal　structure　to　achieve　desired　functions.　So　far,　however,　the　effect　of　crystallographic　orientation　on　the　induced　structure　by　femtosecond　laser　processing　has　yet　been　comprehensively　studied.　The　present　work　is　undertaken　in　an　attempt　to　fill　this　gap　in　our　knowledge.　To　this　end,　commercial-purity　Si　is　used　as　a　target　material　and　high-resolution　transmission　electron　microscopy　as　well　as　electron　backscatter　diffraction　are　applied　to　examine　the　irradiation-induced　microstructural　changes.　The　structural　response　of　the　pulsed　material　is　found　to　be　principally　influenced　by　the　crystallographic　orientation　of　the　target　surface.　Specifically,　at　the　surface　orientation　close　to　{111},　a　pronounced　amorphization　effect　is　observed　whereas　no　disordered　material　is　detected　at　the　orientations　close　to　{100}.　This　phenomenon　could　be　explained　by　the　lowest　crystallization　speed　required　by　the　(111)　surface　due　to　its　smallest　surface　energy.　Compared　with　nanosecond　laser,　non-thermal　melting　induced　by　femtosecond　laser　induces　mild　thermal　gradient　and　favors　recrystallization.