The　problems　and　fabrication　difficulties　for　the　conventional　semiconductor　LDs　(laser　diodes),　VCSELs　(vertical　cavity　surface　emitting　lasers)　and　LEDs　(light　emitting　diodes)　were　analyzed.　The　high　quantum　efficiency　transverse　optical　coupled　LDs,　longitudinal　optical　coupled　VCSELs　with　multi-active　region　structure　and　high　internal　and　external　quantum　efficiency　high　brightness　LEDs　with　small　size　were　proposed　and　fabricated;　they　have　showed　the　excellence　performance.　The　external　and　differential　quantum　efficiency　are　3.3　and　3.8　W/A,　and　the　output　light　power　is　as　high　as　similar　to　6.6W　when　the　injecting　current　equals　2A　for　the　four　active　regions　980nm　strained　InGaAs/GaAs　QW　lasers;　the　highest　pulse　and　CW　light　power　output　are　13.1　mW　and　9mW　of　the　980nm　longitudinal　optical　coupled　VCSELs;　the　on-axis　luminous　intensity　of　the　tunneling　regenerated　multi-active　region　LEDs　will　increase　linearly　with　the　number　of　active　regions　approximately.　The　on-axis　luminous　intensity　for　the　high　external　quantum　efficiency　622nm　LEDs　with　small　size　8milx8mil　is　as　high　as　150-200mcd　at　20mA　injecting　current.