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作者:

Sha, Yin (Sha, Yin.) | Lin, Chen (Lin, Chen.) | Xie, Hongyun (Xie, Hongyun.) | Yi, Xiaoyan (Yi, Xiaoyan.) | Zhan, Teng (Zhan, Teng.) | Liu, Xiancheng (Liu, Xiancheng.) | Xiang, Yang (Xiang, Yang.) | Zhang, Wanrong (Zhang, Wanrong.)

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EI Scopus SCIE

摘要:

In vivo optogenetics provide special and powerful capabilities in regulation of neurons, research of neural circuits and even in treatment of brain diseases. However, conventional hardware for such studies tethers the experimental animals to remote light sources, power sources, or other functional modules, which imposes considerable physical constrains on natural behaviors and limits the range of the experiment. To enable flexible and convenient optogenetic manipulation of neural circuit with finite disruption of animal behavior, a wireles sly powered optoelectronic device, composing mainly of a radio frequency (RF) energy harvester and a high-performance GaN-based light-emitting diode (LED), is demonstrated and can be used to construct an implantable optrode for optogenetics. The wireless RF power signal is collected through an antenna and a two-stage voltage doubling rectifier circuit, and finally converted into high-amplitude DC voltage. Provided with 25-dBm RF power with a distance of 0.2 m, the RF energy harvesting and processing circuit can output a stable 2.81 V DC voltage and drive the designed GaN-based LED to work normally. After being successfully lit, the emission peak wavelength of the LED locates 455 nm and the output optical power density reaches 214.9 mW/mm(2), which is fully capable of activating light-sensitive ion channel channelrhodopsin-2. The total area of the device is 3 mm x 3.2 mm, which is suitable for subdermal implantation. (C) 2021 Society of Photo Optical Instrumentation Engineers (SPIE)

关键词:

light-emitting diodes implantable RF energy harvest wirelessly powered optogenetics

作者机构:

  • [ 1 ] [Sha, Yin]Beijing Univ Technol, Fac Informat Technol, Microelect Dept, Beijing, Peoples R China
  • [ 2 ] [Xie, Hongyun]Beijing Univ Technol, Fac Informat Technol, Microelect Dept, Beijing, Peoples R China
  • [ 3 ] [Liu, Xiancheng]Beijing Univ Technol, Fac Informat Technol, Microelect Dept, Beijing, Peoples R China
  • [ 4 ] [Xiang, Yang]Beijing Univ Technol, Fac Informat Technol, Microelect Dept, Beijing, Peoples R China
  • [ 5 ] [Zhang, Wanrong]Beijing Univ Technol, Fac Informat Technol, Microelect Dept, Beijing, Peoples R China
  • [ 6 ] [Lin, Chen]Chinese Acad Sci, Res & Dev Ctr Semicond Lighting, Inst Semicond, Beijing, Peoples R China
  • [ 7 ] [Yi, Xiaoyan]Chinese Acad Sci, Res & Dev Ctr Semicond Lighting, Inst Semicond, Beijing, Peoples R China
  • [ 8 ] [Zhan, Teng]Chinese Acad Sci, Res & Dev Ctr Semicond Lighting, Inst Semicond, Beijing, Peoples R China
  • [ 9 ] [Lin, Chen]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing, Peoples R China
  • [ 10 ] [Yi, Xiaoyan]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing, Peoples R China
  • [ 11 ] [Zhan, Teng]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing, Peoples R China

通讯作者信息:

  • [Xie, Hongyun]Beijing Univ Technol, Fac Informat Technol, Microelect Dept, Beijing, Peoples R China;;[Yi, Xiaoyan]Chinese Acad Sci, Res & Dev Ctr Semicond Lighting, Inst Semicond, Beijing, Peoples R China;;[Yi, Xiaoyan]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing, Peoples R China

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来源 :

OPTICAL ENGINEERING

ISSN: 0091-3286

年份: 2021

期: 2

卷: 60

1 . 3 0 0

JCR@2022

ESI学科: ENGINEERING;

ESI高被引阀值:87

JCR分区:4

被引次数:

WoS核心集被引频次: 2

SCOPUS被引频次: 3

ESI高被引论文在榜: 0 展开所有

万方被引频次:

中文被引频次:

近30日浏览量: 1

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