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作者:

Cui, Boyao (Cui, Boyao.) | Xing, Yanhui (Xing, Yanhui.) | Han, Jun (Han, Jun.) | Lv, Weiming (Lv, Weiming.) | Lv, Wenxing (Lv, Wenxing.) | Lei, Ting (Lei, Ting.) | Zhang, Yao (Zhang, Yao.) | Ma, Haixin (Ma, Haixin.) | Zeng, Zhongming (Zeng, Zhongming.) | Zhang, Baoshun (Zhang, Baoshun.)

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EI SCIE CSCD

摘要:

In recent years, low-dimensional materials have received extensive attention in the field of electronics and optoelectronics. Among them, photoelectric devices based on photoconductive effect in low-dimensional materials have a broad development space. In contrast to positive photoconductivity, negative photoconductivity (NPC) refers to a phenomenon that the conductivity decreases under illumination. It has novel application prospects in the field of optoelectronics, memory, and gas detection, etc. In this paper, we review reports about the NPC effect in low-dimensional materials and systematically summarize the mechanisms to form the NPC effect in existing low-dimensional materials.

关键词:

low-dimensional materials negative photoconductivity optoelectronic devices

作者机构:

  • [ 1 ] [Cui, Boyao]Beijing Univ Technol, Dept Informat, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 2 ] [Xing, Yanhui]Beijing Univ Technol, Dept Informat, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 3 ] [Han, Jun]Beijing Univ Technol, Dept Informat, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 4 ] [Zhang, Yao]Beijing Univ Technol, Dept Informat, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 5 ] [Ma, Haixin]Beijing Univ Technol, Dept Informat, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 6 ] [Cui, Boyao]Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Multifunct Nanomat & Smart Syst, Suzhou 215123, Peoples R China
  • [ 7 ] [Lv, Weiming]Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Multifunct Nanomat & Smart Syst, Suzhou 215123, Peoples R China
  • [ 8 ] [Lv, Wenxing]Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Multifunct Nanomat & Smart Syst, Suzhou 215123, Peoples R China
  • [ 9 ] [Lei, Ting]Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Multifunct Nanomat & Smart Syst, Suzhou 215123, Peoples R China
  • [ 10 ] [Zeng, Zhongming]Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Multifunct Nanomat & Smart Syst, Suzhou 215123, Peoples R China
  • [ 11 ] [Zhang, Baoshun]Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Multifunct Nanomat & Smart Syst, Suzhou 215123, Peoples R China

通讯作者信息:

  • [Han, Jun]Beijing Univ Technol, Dept Informat, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China;;[Zeng, Zhongming]Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Multifunct Nanomat & Smart Syst, Suzhou 215123, Peoples R China

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来源 :

CHINESE PHYSICS B

ISSN: 1674-1056

年份: 2021

期: 2

卷: 30

1 . 7 0 0

JCR@2022

ESI学科: PHYSICS;

ESI高被引阀值:7

被引次数:

WoS核心集被引频次: 28

SCOPUS被引频次: 30

ESI高被引论文在榜: 0 展开所有

万方被引频次:

中文被引频次:

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