SiC　MOSFETs　have　an　excellent　characteristic　of　high　switching　speed,　which　can　improve　the　efficiency　and　power　density　of　converters　significantly.　However,　the　fast　switching　processes　of　SiC　MOSFETs　cause　serious　crosstalk　problems　in　bridge-arm　configurations,　which　restricts　the　devices＇　performances.　This　paper　presents　a　detailed　and　accurate　improved　crosstalk　analytical　model,　which　takes　into　account　the　nonlinear　capacitances,　the　parasitic　inductances,　the　reverse　recovery　characteristics　of　the　anti-parallel　diodes,　and　the　nonlinear　voltage　switching　and　damping　oscillation　process.　The　novelty　of　the　proposed　model　lies　in　the　fact　that　under　the　condition　of　comprehensively　considering　all　these　non-ideal　factors　of　the　bridge-arm,　the　effects　of　multi-parasitic　elements　and　multi-variables　coupling　to　the　crosstalk　are　hierarchically　divided.　The　parasitic　elements　and　their　correlations　are　described　in　detail　and　the　direct　and　indirect　variables＇　impacts　are　clearly　traced.　Thus,　according　to　the　different　variables　switching　stages,　the　influence　processes　of　these　parasitic　elements　and　variables　can　be　integrated　and　a　complete　equivalent　analytical　model　of　the　crosstalk　process　can　be　derived.　The　simulation　and　experiment　platforms　are　established　and　a　series　of　experimental　verifications　and　comparisons　prove　that　the　model　can　replicate　experimental　measurements　of　crosstalk　with　good　accuracy　and　detail.