Radiation effects of heavy ions on the static and dynamic characteristics of 850 nm high-speed vertical cavity surface emitting lasers - 文章详情页

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EI SCIE

摘要：

We　investigate　the　radiation　effects　of　1907　MeV　Ta　ions　on　the　static　and　dynamic　characteristics　of　850　nm　high-speed　vertical　cavity　surface　emitting　lasers　(VCSELs).　The　threshold　current　and　slope　efficiency　are　found　to　be　degraded.　However,　appropriate　ion　fluence　irradiation　can　improve　the　modulation　bandwidth.　The　maximum　3　dB　frequency　is　increased　to　14.02　GHz　from　13　GHz　at　a　fluence　of　1　×　108　ions/cm2.　The　observed　behaviour　can　be　explained　in　terms　of　reflectivity　degradation　of　lossy　distributed-Bragg　reflectors　as　well　as　the　degradation　of　quantum　wells.　©　2021　Elsevier　B.V.

关键词：

Heavy ions Laser pulses Quantum well lasers Radiation effects Reflection Semiconductor quantum wells Surface emitting lasers Transceivers

作者机构：

[ 1 ] [Shan, Xiaoting]University of Chinese Academy of Sciences, Beijing; 100049, China
[ 2 ] [Shan, Xiaoting]Institute of Microelectronics, Chinese Academy of Sciences, Beijing; 100029, China
[ 3 ] [Li, Bo]Institute of Microelectronics, Chinese Academy of Sciences, Beijing; 100029, China
[ 4 ] [Zhao, Fazhan]Institute of Microelectronics, Chinese Academy of Sciences, Beijing; 100029, China
[ 5 ] [Wang, Lei]Institute of Microelectronics, Chinese Academy of Sciences, Beijing; 100029, China
[ 6 ] [Sun, Yun]Institute of Microelectronics, Chinese Academy of Sciences, Beijing; 100029, China
[ 7 ] [Xun, Meng]Institute of Microelectronics, Chinese Academy of Sciences, Beijing; 100029, China
[ 8 ] [Liu, Jie]Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou; Gansu; 730000, China
[ 9 ] [Gao, Jiantou]Institute of Microelectronics, Chinese Academy of Sciences, Beijing; 100029, China
[ 10 ] [Gu, Rui]University of Chinese Academy of Sciences, Beijing; 100049, China
[ 11 ] [Gu, Rui]Institute of Microelectronics, Chinese Academy of Sciences, Beijing; 100029, China
[ 12 ] [Yang, Chengyue]Institute of Microelectronics, Chinese Academy of Sciences, Beijing; 100029, China
[ 13 ] [Xie, Yiyang]Beijing University of Technology, Beijing; 100124, China
[ 14 ] [Wang, Ju]School of Physics, Peking University, Beijing; 100871, China
[ 15 ] [Wang, Shufeng]School of Physics, Peking University, Beijing; 100871, China
[ 16 ] [Han, Zhengsheng]University of Chinese Academy of Sciences, Beijing; 100049, China
[ 17 ] [Han, Zhengsheng]Institute of Microelectronics, Chinese Academy of Sciences, Beijing; 100029, China
[ 18 ] [Jingtao zhou]Institute of Microelectronics, Chinese Academy of Sciences, Beijing; 100029, China
[ 19 ] [Wu, Dexin]Institute of Microelectronics, Chinese Academy of Sciences, Beijing; 100029, China

通讯作者信息：

[sun, yun]institute of microelectronics, chinese academy of sciences, beijing; 100029, china

电子邮件地址：

sunyun@ime.ac.cn

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