Topological　Weyl　semimetals　have　attracted　considerable　interest　because　they　manifest　underlying　physics　and　device　potential　in　spintronics.　Large　anomalous　Hall　effect　(AHE)　in　non-collinear　antiferromagnets　(AFMs)　represents　a　striking　Weyl　phase,　which　is　associated　with　Bloch-band　topological　features.　In　this　work,　we　report　robust　AHE　and　Lifshitz　transition　in　high-quality　Weyl　semimetal　Mn3Ge　thin　film,　comprising　stacked　Kagome　lattice　and　chiral　antiferromagnetism.　We　successfully　achieved　giant　AHE　in　our　Mn3Ge　film,　with　a　strong　Berry　curvature　enhanced　by　the　Weyl　phase.　The　enormous　coercive　field　H-C　in　our　AHE　curve　at　5　K　reached　an　unprecedented　5.3　T　among　hexagonal　Mn3X　systems.　Our　results　provide　direct　experimental　evidence　of　an　electronic　topological　transition　in　the　chiral　AFMs.　The　temperature　was　demonstrated　to　play　an　efficient　role　in　tuning　the　carrier　concentration,　which　could　be　quantitatively　determined　by　the　two-band　model.　The　electronic　band　structure　crosses　the　Fermi　energy　level　and　leads　to　the　reversal　of　carrier　type　around　50　K.　The　results　not　only　offer　new　functionality　for　effectively　modulating　the　Fermi　level　location　in　topological　Weyl　semimetals　but　also　present　a　promising　route　of　manipulating　the　carrier　concentration　in　antiferromagnetic　spintronic　devices.