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作者:

Zhang, Shuqing (Zhang, Shuqing.) | Xu, Runzhang (Xu, Runzhang.) | Luo, Nannan (Luo, Nannan.) | Zou, Xiaolong (Zou, Xiaolong.)

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摘要:

Since the discovery of intrinsic ferromagnetism in atomically thin Cr(2)Gr(2)Te(6) and CrI3 in 2017, research on two-dimensional (2D) magnetic materials has become a highlighted topic. Based on 2D magnetic materials and their heterostructures, exotic physical phenomena at the atomically thin limit have been discovered, such as the quantum anomalous Hall effect, magneto-electric multiferroics, and magnon valleytronics. Furthermore, magnetism in these ultrathin magnets can be effectively controlled by external perturbations, such as electric field, strain, doping, chemical functionalization, and stacking engineering. These attributes make 2D magnets ideal platforms for fundamental research and promising candidates for various spintronic applications. This review aims at providing an overview of the structures, properties, and external controls of 2D magnets, as well as the challenges and potential opportunities in this field.

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作者机构:

  • [ 1 ] [Zhang, Shuqing]Tsinghua Univ, Tsinghua Berkeley Shenzhen Inst TBSI, Shenzhen Geim Graphene Ctr SGC, Shenzhen 518055, Peoples R China
  • [ 2 ] [Xu, Runzhang]Tsinghua Univ, Tsinghua Berkeley Shenzhen Inst TBSI, Shenzhen Geim Graphene Ctr SGC, Shenzhen 518055, Peoples R China
  • [ 3 ] [Zou, Xiaolong]Tsinghua Univ, Tsinghua Berkeley Shenzhen Inst TBSI, Shenzhen Geim Graphene Ctr SGC, Shenzhen 518055, Peoples R China
  • [ 4 ] [Zhang, Shuqing]Tsinghua Univ, Tsinghua Shenzhen Int Grad Sch TSIGS, Shenzhen 518055, Peoples R China
  • [ 5 ] [Xu, Runzhang]Tsinghua Univ, Tsinghua Shenzhen Int Grad Sch TSIGS, Shenzhen 518055, Peoples R China
  • [ 6 ] [Zou, Xiaolong]Tsinghua Univ, Tsinghua Shenzhen Int Grad Sch TSIGS, Shenzhen 518055, Peoples R China
  • [ 7 ] [Zhang, Shuqing]Beijing Univ Technol, Inst Informat Photon Technol, Fac Sci, Beijing 100124, Peoples R China
  • [ 8 ] [Luo, Nannan]Hunan Univ, Sch Phys & Elect, Dept Appl Phys, Changsha 410082, Hunan, Peoples R China

通讯作者信息:

  • [Zou, Xiaolong]Tsinghua Univ, Tsinghua Berkeley Shenzhen Inst TBSI, Shenzhen Geim Graphene Ctr SGC, Shenzhen 518055, Peoples R China;;[Zou, Xiaolong]Tsinghua Univ, Tsinghua Shenzhen Int Grad Sch TSIGS, Shenzhen 518055, Peoples R China

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来源 :

NANOSCALE

ISSN: 2040-3364

年份: 2021

期: 3

卷: 13

页码: 1398-1424

6 . 7 0 0

JCR@2022

ESI学科: PHYSICS;

ESI高被引阀值:72

JCR分区:1

被引次数:

WoS核心集被引频次: 87

SCOPUS被引频次: 90

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