Considering　the　noise　correlation　term　between　collector　and　base　current　shot　noise,　there　mainly　are　four　noise　parameter　models　of　SiGe　HBTs,　including　the　unified　noise　model　(UNI),　two　SPICE　noise　models　(SPN1,　SPN2),　the　thermodynamic　noise　model　(TDN).　A　comparison　of　these　modets　was　investigated　in　this　work.　A　SiGe　HBT　based　on　BiCMOS　process　was　fabricated　and　its　S-parameters　and　Minimum　Noise　Figure　were　tested.　Through　the　comparison　between　the　measurement　and　the　simulation　results　from　these　models,　two　of　the　models,　the　UNI　and　the　SPN2,　were　obviously　in　good　agreement　with　the　measured　results　at　high-frequency.