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作者:

Shao, Hongyan (Shao, Hongyan.) | Guan, Baolu (Guan, Baolu.) | Cui, Lijie (Cui, Lijie.) | Cui, Ning (Cui, Ning.) | Zhang, Yang (Zhang, Yang.) | Zeng, Yiping (Zeng, Yiping.)

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EI SCIE

摘要:

A distinctive method is used to achieve transverse-mode control by building and integrating a tunable liquid crystal (LC) mode filter on top of traditional vertical-cavity surface-emitting lasers (VCSELs). An LC cell is fabricated by injecting a type of nematic LC material (E7) in an annular groove patterned by SiO2. By electrically tuning the refractive index of the LC, a spatially dependent reflectivity profile can be achieved and optimized, which directly influences the threshold modal gain of each transverse mode provided by oxide-confined VCSELs. The flexible and accurate control performance of the LC mode filter structure have been demonstrated by the simulation results and our analysis. This design is a completely novel method to realize VCSELs with an accurate and real-time controllable transverse-mode, and it will probably play a significant role in the future. © 2021 Author(s).

关键词:

Crystal filters Liquid crystals Liquid lasers Passive filters Refractive index Silica Surface emitting lasers Transceivers

作者机构:

  • [ 1 ] [Shao, Hongyan]Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China
  • [ 2 ] [Shao, Hongyan]College of Materials Science and Opto-electronic Technology, University of Chinese Academy of Sciences, Beijing; 100049, China
  • [ 3 ] [Shao, Hongyan]Key Laboratory of Opto-electronic Technology, Ministry of Education, Beijing University of Technology, Beijing; 100124, China
  • [ 4 ] [Guan, Baolu]Key Laboratory of Opto-electronic Technology, Ministry of Education, Beijing University of Technology, Beijing; 100124, China
  • [ 5 ] [Cui, Lijie]Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China
  • [ 6 ] [Cui, Lijie]College of Materials Science and Opto-electronic Technology, University of Chinese Academy of Sciences, Beijing; 100049, China
  • [ 7 ] [Cui, Ning]Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China
  • [ 8 ] [Cui, Ning]College of Materials Science and Opto-electronic Technology, University of Chinese Academy of Sciences, Beijing; 100049, China
  • [ 9 ] [Zhang, Yang]Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China
  • [ 10 ] [Zhang, Yang]College of Materials Science and Opto-electronic Technology, University of Chinese Academy of Sciences, Beijing; 100049, China
  • [ 11 ] [Zeng, Yiping]Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China
  • [ 12 ] [Zeng, Yiping]College of Materials Science and Opto-electronic Technology, University of Chinese Academy of Sciences, Beijing; 100049, China

通讯作者信息:

  • [guan, baolu]key laboratory of opto-electronic technology, ministry of education, beijing university of technology, beijing; 100124, china

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来源 :

AIP Advances

年份: 2021

期: 1

卷: 11

1 . 6 0 0

JCR@2022

ESI学科: MATERIALS SCIENCE;

ESI高被引阀值:8

被引次数:

WoS核心集被引频次:

SCOPUS被引频次: 1

ESI高被引论文在榜: 0 展开所有

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