Local　lifetime　control　is　obtained　by　means　of　local　platinum　doping　using　platinum　gettering　through　the　vacancy　defects　induced　by　proton　irradiation.　Assisted　by　total　lifetime　control　using　4MeV　electron　irradiation,　a　fast　soft　recovery　power　diode　is　manufactured.　The　reverse　recovery　time　and　softness　is　110ns　and　I　respectively　under　test　condition　of　I-F=25A,　VB=400V,　di/dt=80A/mu　s,　room　temperature.　It　is　equivalent　to　that　of　the　international　advanced　diodes　SNM30EUZ12B.　But　the　reverse　leakage　under　VB=400V　is　only　208nA　at　room　temperature,　only　half　of　SML30EUZ12B＇s.　The　performance　of　such　diode　is　on　top　of　congeneric　products.