By　adjusting　the　KOH/H2O　texturing　condition　intendedly,　different　random　pyramidal　textures　with　the　average　pyramid　size　of　8　μm　(large),　4　μm　(medium)　and　1.5　μm　(small)　were　prepared　on　N　type　M2　monocrystalline　silicon　substrates　for　the　fabrication　of　silicon　heterojunction　(SHJ)　solar　cell.　It　was　evidenced　that　the　pyramid　morphology　not　only　impacted　the　reflection　of　incident　light　and　the　heterojunction　interface　passivation　quality　but　also　affected　the　interface　contact　property　between　transparent　conductive　oxide　(TCO)　layer　and　Ag　electrode.　The　texture　with　small　pyramids　presented　the　best　anti-reflective　and　passivation　performance　due　to　the　pyramidal　size　distribution　uniformity,　which　brought　the　SHJ　solar　cell　the　highest　short-circuit　current　density　(JSC)　and　open-circuit　voltage　(VOC).　However,　the　texture　with　small　pyramids　also　led　to　the　worst　fill　factor　(FF).　As　a　result,　there　was　no　obvious　difference　on　the　conversion　efficiency　for　the　textures　with　different　pyramidal　size.　By　characterizing　the　TCO/Ag　contact,　the　FF　reduction　induced　by　the　small　pyramid　texture　could　be　attributed　to　the　increased　specific　contact　resistance　of　the　TCO/Ag　contact,　which　resulted　from　the　fact　that　there　were　lots　of　voids　between　the　TCO　layer　and　Ag　electrode,　since　Ag　particles　with　a　larger　size　than　the　small　pyramids　could　not　fill　into　the　limited　space　between　the　adjacent　pyramids.　As　a　result,　in　order　to　realize　the　potential　to　enhance　the　SHJ　solar　cell　conversion　efficiency　by　adopting　the　texture　with　small　pyramids,　new　Ag　paste　with　smaller　Ag　particles　should　be　adopted.　©　2021　International　Solar　Energy　Society