Silicon　carbide　(SiC)　metal-oxide-semiconductor　field-effect　transistors　(MOSFETs)　have　great　advantages　in　improving　the　power　density　and　performance　of　power　converters　due　to　the　high　switching　frequency,　high　operating　voltage.　However,　the　increase　in　switching　frequency　is　also　increasingly　inflicted　the　voltage　and　current　stresses　to　the　parasitic　elements　of　the　SiC　MOSFET,　which　restricts　the　device＇s　optimal　performance.　In　addition,　many　parasitic　elements　of　SiC　MOSFET　are　coupled　with　each　other　during　the　switching　process,　which　makes　the　analysis　complicated　and　calculation　cumbersome.　This　paper　presents　an　analytical　model　for　SiC　MOSFETs,　which　identifies　and　selectes　the　dominant　elements　and　key　variations　of　each　stage　separately　according　to　the　change　stages　of　major　variables.　The　complexity　of　the　model　is　reduced　while　the　accuracy　is　guaranteed.　Using　this　model,　the　voltage　and　current　switching　rate　of　SiC　MOSFET　can　be　quickly　solved,　and　the　impact　mechanism　of　each　critical　parameter　can　also　be　revealed　clearly.　A　double　pulse　test　circuit　composed　of　a　600V/20A　SiC　MOSFET　is　set　up　and　experimental　results　are　obtained　to　verify　the　accuracy　of　the　proposed　analytical　model.　©　Published　under　licence　by　IOP　Publishing　Ltd.