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摘要：
A two-stage broadband low noise amplifier (LNA) was designed. The LNA was implemented on a Teflon substrate using GaAs FET ATF-10136 and PHEMT ATF-34143 with micro-strip circuit technology. This LNA resulted in a noise figure of 1.1dB, and 21dB gain over 3.6 to 4.2 GHz range. The input and output VSWR are all less than 2.8. The computer simulated results were coincident with that of the test.
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来源 ：
IEEE 2007 INTERNATIONAL SYMPOSIUM ON MICROWAVE, ANTENNA, PROPAGATION AND EMC TECHNOLOGIES FOR WIRELESS COMMUNICATIONS, VOLS I AND II
年份： 2007
页码： 458-,
语种： 英文
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