We　present　an　optically　pumped　vertical　external　cavity　surface　emitting　laser　using　the　semiconductor　gain　chip　composed　of　quantum　wells.　With　a　semiconductor　saturable　absorber　mirror　(SESAM),　we　obtained　a　Q-switched-like　pulse　output.　The　output　power　reached　more　than　3　mW　at　a　center　wavelength　of　1007nm　whose　repetition　frequency　was　100　kHz　and　time　bandwidth　was　500ns.　We　discussed　the　possible　reasons　that　the　output　power　was　lower　compared　with　the　CW　operation.　We　also　investigated　the　relationship　between　the　intra-cavity　intensity　and　the　output　pulse　width.　By　designing　the　gain　chip　more　carefully　and　increasing　the　pump　power,　it　should　be　possible　to　obtain　entirely　mode-locking　operation.