Based　on　proximity　gettering　of　platinum　by　vacancy　defects　which　are　induced　by　proton　irradiation,　local　platinum　doping　is　obtained.　It　is　used　as　a　local　lifetime　control　technology　in　high-power　diodes.　The　theoretical　dependence　of　electrical　active　Pt　concentration　Cpts　on　irradiation　induced　defects　concentration　Cv　is　also　studied.　The　diodes＇　reverse　performance　parameters　are　measured.　They　are　functions　of　irradiation　dose.　For　low　proton　irradiation　dose,　the　gettered　quantities　of　platinum　by　irradiation　induced　defects　are　enhanced　when　the　irradiation　dose　increases.　This　can　improve　the　performances　of　the　device.　But　when　the　proton　irradiation　dose　is　high　enough,　the　peak　concentration　of　gettered　platinum　tends　saturation.　Further　more,　for　deep　junction　device,　the　side　effect　brought　by　high　dose　irradiation　will　decrease　the　platinum　gettering　efficiency　and　the　performances　of　the　device　degenerated　under　higher　irradiation　dose.　On　the　base　of　theoretical　study,　we　improved　the　device　structure　and　manufacture　process,　a　higher　peak　concentration　is　obtained.　The　recovery　speed　has　been　improved　further.