The　theory　of　Light　Emitting　Diodes(LEDs)　life　tests　and　mathematic　model　of　life　tests　were　introduced.　The　performance　of　LEDs　was　affected　by　the　drive　current　and　by　the　ambient　temperature.　Life　tests　of　tunnel　junction　regenerated　AlGaInP　LEDs　were　performed　at　different　currents　and　ambient　temperatures.　On　axis　output　intensity　of　tunnel　junction　regenerated　LED　had　decreased　35.53%　after　5203　hours　at　30mA　and　25　degrees　C.　At　the　ambient　temperature　of　80　degrees　C,　on　axis　output　intensity　of　tunnel　junction　regenerated　LED　had　degraded　19.26%　after　3888　hours　at　20mA.　According　to　the　results　mentioned　above,　the　normal　working　lifetime　of　tunnel　junction　regenerated　LEDs　were　concluded.　Moreover,　the　main　Failure　Mechanisms　of　it　were　described.　Our　work　reviews　the　failure　analysis　that　was　performed　on　the　degraded　LEDs　and　the　degradation　mechanisms　that　were　identified.　The　results　show　a　thermal　degradation　mechanism　that　dominates　degradation　at　high　ambient　temperatures.