A　Novel　structure　of　dual-wavelength　semiconductor　laser　diode　is　proposed　and　fabricated.　Two　laser　structures　based　on　two　kinds　of　materials　AlGaAs　and　AlGaInP　active　layer,　which　are　cascaded　by　a　high　doping　tunnel　junction　during　the　epitaxial　growth.　The　lasers　can　emit　at　wavelength　of　699nm　and　794nm　at　the　same　time.　Without　face　coating,　the　output　power　of　the　dual-wavelength　laser　is　high　as　50mW　at　220mA.　And　the　slope　efficiency　of　these　devices　is　about　0.42A/W.