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摘要：
A new microwave device model is brought out and simulated, which is called TI-PHEMT. The maximum extrinsic transconductance at high temperature increases significantly and therefore the microwave performance of HEMT at high temperature is increased. A new concept ＂Temperature Injection＂ is put forward to explain the reason.
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来源 ：
2004 4th INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY PROCEEDINGS
年份： 2004
页码： 531-535
语种： 英文
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