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In this paper the magnetic field profiles, which were produced by three ways in the deposition chamber and plasma chamber of single coil divergent field microwave electronic circle resonance chemistry vapor deposition (MWECR CVD) system, was investigated. Then the magnetic field gradient of these magnetic field profiles was obtained quantitatively by using Lorentz fit. The results indicated that the gradient value of the magnetic field profile nearby the substrate, which was produced by a coil current with 137.7A if a SmCo permanent magnet was equipped below the substrate holder, is the largest, and the highest deposition rate of the hydrogenated amorphous silicon (a-Si:H) film was observed in this condition.
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