A　Novel　structure　of　high　power　dual-wavelength　semiconductor　laser　diode　is　proposed　and　fabricated.　Two　laser　structures　are　cascaded　by　a　high　doping　tunnel　junction　during　the　epitaxial　growth.　The　lasers　can　emit　at　wavelength　of　951nm　and　987mn　at　the　same　time.　Without　facet　coating,　the　output　power　of　the　dual-wavelength　laser　is　as　high　as　3.1W　at　3A.　And　the　slope　efficiency　of　these　devices　is　about　1.21A/W.　Much　higher　output　power　can　be　reached　for　those　dual-wavelength　lasers　when　modifying　the　structure.　The　external　differential　quantum　efficiency　of　different　cavity　length　devices　is　analyzed.