We　present　an　optically　pumped　vertical　external　cavity　surface　emitting　lasers　using　the　semiconductor　gain　chip　composed　of　quantum　wells.　The　dependence　of　the　spectrum　of　the　output　on　the　temperature　of　the　gain　chip　was　measured.　The　maximum　output　power　reached　40mW　at　the　wavelength　of　1015.5nm　with　the　pump　power　of　1.5W.　The　optical　conversion　efficiency　reached　2.7%.