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作者:

Lin, Zhenyuan (Lin, Zhenyuan.) | Ji, Lingfei (Ji, Lingfei.) (学者:季凌飞) | Yan, Tianyang (Yan, Tianyang.) | Xu, Yuanbo (Xu, Yuanbo.) | Sun, Zhengyang (Sun, Zhengyang.)

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Scopus SCIE

摘要:

We demonstrate the surface defect type, density and related electrical modification of graphene sheet generated by 193-nm ArF excimer laser irradiation on n-type 4H-SiC. The charge density difference and partial density of states (PDOS) carried out by density functional theory (DFT) calculations predict the graphene with lattice imperfection can induce virtual bound states at the vacancy sites and Fermi level shift compared to perfect graphene. The surface defects density of laser generated graphene is characterized by nanoscale electrical measurements using the conductive atomic force microscope (c-AFM). The corresponding current-voltage (I-V) curves show that the electronic charge transfers, thereby electrical conductivities of laser generated graphene, are influenced by the lattice defects. The defect densities are tunable by change laser fluence and pulse number. This research provides an understanding of the interfacial transport properties between laser generated graphene and 4H-SiC through a detailed analysis of surface defects. (C) 2020 The Authors. Published by Elsevier B.V.

关键词:

Laser Surface defect Interfacial transport SiC Graphene

作者机构:

  • [ 1 ] [Lin, Zhenyuan]Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China
  • [ 2 ] [Ji, Lingfei]Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China
  • [ 3 ] [Yan, Tianyang]Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China
  • [ 4 ] [Xu, Yuanbo]Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China
  • [ 5 ] [Sun, Zhengyang]Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China

通讯作者信息:

  • 季凌飞

    [Ji, Lingfei]Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China

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来源 :

JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T

ISSN: 2238-7854

年份: 2020

期: 3

卷: 9

页码: 5934-5941

6 . 4 0 0

JCR@2022

被引次数:

WoS核心集被引频次: 10

SCOPUS被引频次: 10

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