In　recent　years,　the　resistance　of　materials　with　large　magnetoresistance　varies　significantly　with　the　applied　magnetic　field,　which　is　a　key　factor　in　modern　electronic　equipment.　Giant　magnetoresistance　telluride　has　unpredictable　large　unsaturated　magnetoresistance　and　ultra-high　migration.　Characteristics　such　as　rate　and　anomalous　Hall　effect　can　be　used　in　strong　magnetic　field　detection,　information　recording,　and　magnetoresistive　devices,　such　as　hard　disk　drives　in　computers,　which　have　important　scientific　significance　and　broad　application　prospects.　The　metal　tellurium　compound　with　quasi-two-dimensional　features,　non-planar　topological　band　structure,　and　the　one-dimensional　tellurium　silver　compound　as　an　important　material　of　the　unsaturated　linear　giant　magnetoresistive　material　system　have　been　paid　attention　to　by　researc-hers.　However,　at　present,　there　are　still　some　problems　in　the　material,　mainly　reflected　in:　(i)　synthesis.　At　present,　large-scale　production　of　high-quality　large-area　thin-layer　and　bulk　materials　has　not　been　realized,　which　limits　its　development　and　application.　(ii)　Performance　and　structure.　Excellent　properties　such　as　giant　magnetoresistance,　thermoelectric　properties,　pressure-induced　superconductivity,　and　low-energy　light　absorption　have　been　studied.　However,　the　carrier　concentration　is　adjusted　by　doping　and　the　like　to　improve　the　giant　magnetoresistance　performance　has　not　been　thoroughly　analyzed.　In　recent　years,　researchers　have　made　significant　progress　in　research　and　preparation　of　performance　problems　that　have　to　be　solved.　It　has　been　proven　by　the　use　of　top-down　techniques　that　it　is　possible　to　produce　layered　materials　at　low　cost,　while　bottom-up　techniques　are　currently　widely　used,　such　as　chemical　vapor　deposition,　flux　method　and　other　methods,　which　can　be　prepared　with　high-quality　materials　with　few　defects.　In　terms　of　magnetoresistance　performance,　the　anisotropic　magnetoresistance　of　tellurium　linear　giant　magnetoresistive　materials　strongly　depends　on　the　angle　and　temperature.　When　the　orientation　of　magnetic　field,　electric　field　and　crystal　axis　are　different,　the　value　of　magnetoresistance　is　very　different.　The　magnetoresistance　material　is　as　high　as　1　300　000%　at　a　low　temperature　of　0.53　K　and　a　high　magne-tic　field　of　60　T.　In　terms　of　phase　structure,　Transition　metal　telluride　is　relatively　stable　in　2H　phase　or　T,　T＇　and　Td　distortion,　and　can　induce　reversible　phase　transition.　In　terms　of　low-energy　electronic　structure,　the　size　and　number　of　electron-hole　pockets　near　the　fermi　surface,　which　can　be　the　main　reason　for　explaining　the　main　characteristics　of　the　giant　magnetoresistance　effect.　In　this　paper,　two-dimensional　MoTe2,　WTe2　and　one-dimensional　Ag2Te　materials　are　represented.　The　chemical　preparation　methods　of　the　linear　giant　magnetoresistance　materials　in　the　past　years　are　reviewed,　as　well　as　the　close　relationship　between　properties　and　structures.　The　advantages　and　disadvantages　of　preparation　methods　of　linear　magnetoresistance　materials　with　different　dimensions　are　compared　and　proposed.　We　discuss　using　the　design　and　synthesis　strategy　of　materials　such　as　crystal　anisotropy　to　realize　chemical　preparation.　The　relationship　between　the　magnetoresistance　properties　and　the　structure　of　crystals　of　this　kind　of　materials　is　discussed.　It　summarizes　its　significance　in　optoelectronic　applications.　The　potential　applications　of　the　material　in　electronic　devices　can　be　stimulated　by　doping　and　modification　in　a　pro-mising　way.　©　2020,　Materials　Review　Magazine.　All　right　reserved.