Generally,　the　failure　of　solder　joint　in　electronic　products　may　cause　the　entire　product　to　be　scrapped.　In　this　case,　the　recycling　of　electronic　components　is　of　great　significance　for　saving　resources.　It　is　worth　pointing　out　that　the　effective　reuse　of　electronic　components　rely　on　perfect　separation　of　welding　interface　of　them.　Aiming　at　paving　the　way　for　developing　a　feasible　interface　separation　technique　theoretically,　mole-cular　dynamics　simulation　was　carried　out　to　study　the　effects　of　electric　field　direction　and　strength　on　the　diffusion　behavior　of　atoms　at　Cu/Cu3Sn　interface.　It　was　found　that　the　direction　of　the　electric　field　played　a　critical　role　in　affecting　the　diffusion　behavior　of　the　atoms　at　Cu/Cu3Sn　interface.　Under　the　same　conditions,　the　diffusion　of　atoms　were　more　likely　to　occur　in　the　models　under　a　positive　electric　field　than　that　in　the　one　without　electric　field.　Furthermore,　study　on　the　diffusion　behavior　of　atoms　at　Cu/Cu3Sn　interface　under　electric　fields　of　diverse　intensities　were　conducted.　As　could　be　seen　from　the　results,　the　increase　of　electric　field　intensities　contributed　to　raising　the　intrinsic　diffusion　coefficient　of　Cu3Sn　atoms　near　the　interface,　while　lowering　the　intrinsic　diffusion　coefficient　of　atoms　in　Cu　crystal,　so　as　to　enlarge　the　difference　in　diffusion　coefficient　of　interface　atoms.　Consequently,　more　obvious　Kirkendall　effect　would　be　produced,　which　was　beneficial　to　the　separation　of　Cu/Cu3Sn　interface.　©　2020,　Materials　Review　Magazine.　All　right　reserved.