Arc　discharge　is　traditionally　used　to　synthesize　randomly　arranged　graphene　flakes.　In　this　paper,　we　substantially　modify　it　into　a　glow　discharge　method　so　that　the　discharge　current　is　much　more　reduced.　The　H-2　and/or　Ar　plasma　etching　of　the　graphitic　electrode　(used　to　ignite　the　plasma)　is　hence　much　gentler,　rendering　it　possible　to　grow　graphene　in　thin　film　format.　During　the　growth　at　a　few　mbar,　there　is　no　external　carbon　gas　precursor　introduced.　The　carbon　atoms　and/or　carbon　containing　particles　as　a　result　of　the　plasma　etching　are　emitted　in　the　chamber,　some　of　which　undergo　gas　phase　scattering　and　deposit　onto　the　metallic　catalyst　substrates　(Cu-Ni　alloy　thin　films　or　Cu　foils)　as　graphene　sheets.　It　is　found　that　high　quality　monolayer　graphene　can　be　synthesized　on　Cu　foil　at　900　degrees　C.　On　Cu-Ni,　under　the　same　growth　condition,　somewhat　more　bilayer　regions　are　observed.　It　is　observed　that　the　material　quality　is　almost　indifferent　to　the　gas　ratios,　which　makes　the　optimization　of　the　deposition　process　relatively　easy.　Detailed　study　on　the　deposition　procedure　and　the　material　characterization　have　been　carried　out.　This　work　reveals　the　possibility　of　producing　thin　film　graphene　by　a　gas　discharge　based　process,　not　only　from　fundamental　point　of　view,　but　it　also　provides　an　alternative　technique　other　than　standard　chemical　vapor　deposition　to　synthesize　graphene　that　is　compatible　with　the　semiconductor　planar　process.　As　the　process　uses　solid　graphite　as　a　source　material　that　is　rich　in　the　crust,　it　is　a　facile　and　relatively　cheap　method　to　obtain　high　quality　graphene　thin　films　in　this　respect.