Performance of heterojunction solar cells with different intrinsic a-Si:H thin layers deposited by RF- and VHF-PECVD - 文章详情页

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The　effect　of　plasma　excitation　frequency　on　the　performance　of　intrinsic　hydrogenated　amorphous　silicon　(a-Si:H)　films　and　heterojunction　solar　cells　by　radio-frequency　(RF,　13.56　MHZ)　and　very-high-frequency　(VHF,　40　MHZ)　plasma-enhanced　chemical　vapor　deposition　(PECVD)　have　been　investigated.　The　thickness　and　microstructure　of　intrinsic　a-Si:H　films　were　measured　by　spectroscopic　ellipsometry　and　Fourier　transform　infrared　spectroscopy　(FTIR).　The　a-Si:H/c-Si　interface　passivation　quality　were　determined　by　minority　carrier　lifetime　and　transmission　electron　microscopy　(TEM).　The　current-voltage　(I-V)　performance　of　the　HJT　solar　cells　were　also　evaluated.　The　results　reveal　that　a-Si:H　films　developed　by　RF-PECVD　with　a　large　area　of　parallel-plate　reactors　(＞　1　m(2))　exhibit　better　thickness　uniformity,　lower　microstructure　factor,　and　higher　minority　carrier　lifetimes.　Hence　HJT　solar　cells　have　achieved　efficiency　of　24.9%,　compared　with　cell　efficiency　of　24.6%　with　intrinsic　a-Si:H　films　developed　by　VHF-PECVD.

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作者机构：

[ 1 ] [Wang, Jianqiang]Beijing Univ Technol, Fac Mat & Mfg, Beijing Key Lab Microstruct & Property Adv Mat, Key Lab Adv Funct Mat,Educ Minist China, Beijing 100124, Peoples R China
[ 2 ] [Ruan, Tianyu]Beijing Univ Technol, Fac Mat & Mfg, Beijing Key Lab Microstruct & Property Adv Mat, Key Lab Adv Funct Mat,Educ Minist China, Beijing 100124, Peoples R China
[ 3 ] [Zhang, Yongzhe]Beijing Univ Technol, Fac Mat & Mfg, Beijing Key Lab Microstruct & Property Adv Mat, Key Lab Adv Funct Mat,Educ Minist China, Beijing 100124, Peoples R China
[ 4 ] [Yan, Hui]Beijing Univ Technol, Fac Mat & Mfg, Beijing Key Lab Microstruct & Property Adv Mat, Key Lab Adv Funct Mat,Educ Minist China, Beijing 100124, Peoples R China
[ 5 ] [Ru, Xiaoning]Chengdu R&D Ctr, Hanergy Thin Film Power Grp, Chengdu 610200, Sichuan, Peoples R China
[ 6 ] [Hu, Yunfei]Shenzhen Technol Univ, Coll New Mat & New Energies, Shenzhen 518118, Peoples R China

通讯作者信息：

张永哲严辉
[Zhang, Yongzhe]Beijing Univ Technol, Fac Mat & Mfg, Beijing Key Lab Microstruct & Property Adv Mat, Key Lab Adv Funct Mat,Educ Minist China, Beijing 100124, Peoples R China;;[Yan, Hui]Beijing Univ Technol, Fac Mat & Mfg, Beijing Key Lab Microstruct & Property Adv Mat, Key Lab Adv Funct Mat,Educ Minist China, Beijing 100124, Peoples R China;;[Hu, Yunfei]Shenzhen Technol Univ, Coll New Mat & New Energies, Shenzhen 518118, Peoples R China

电子邮件地址：

huyunfei@sztu.edu.cn |
yzzhang@bjut.edu.cn |
hyan@bjut.edu.cn

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