SnS2　exhibits　a　high　absorbance　coefficient　and　strong　photoconductive　properties　in　ultraviolet-visible　regions,　making　it　a　promising　photodetector　with　excellent　photoelectric　performance.　The　characteristic　of　a　large　yield　of　photocarriers　in　SnS2　with　the　high　mobility　of　graphene　is　combined　and　a　vertical　graphene/SnS2　van　der　Waals　heterostructure　photodetector　is　fabricated,　which　can　obtain　effective　electron-hole　pairs　separation　under　the　built-in　electric　field,　thus　having　a　high　photoresponse.　It　has　the　characteristics　of　ultrahigh　responsivity　(6.35　x　10(5)　A　W-1)　and　high　external　quantum　efficiency　(2.15　x　10(8)%)　under　365　nm　light.　Such　high-performance　graphene/SnS2　heterostructures　may　find　promising　applications　in　future　optoelectronic　devices.