Two-dimensional　(2D)　materials　have　been　demonstrated　to　be　promising　candidates　to　design　high　performance　photodetectors　owing　to　their　strong　light-matter　interaction.　However,　the　performance　of　2D　material　photodetectors　is　still　unsatisfactory,　such　as　slow　response　speed　due　to　defects　and　vulnerable　contact　interface,　which　impede　their　rapid　development　in　the　field　of　optoelectronics.　In　this　paper,　we　obtained　the　ideal　and　large　photosensitive　van　der　Waals　Schottky　interface　by　the　laminating-flipping　method.　Hence,　a　fast　response　speed　(＜1　ms)　and　high　detectivity　(＞10(12)　Jones)　are　observed　on　the　van　der　Waals　Schottky　junction　photodiode.　More　importantly,　benefiting　from　the　flat　Schottky　interface　(the　roughness　similar　to　0.6　nm),　a　sub-bandgap　light　response　modulated　by　the　Schottky　barrier　height　(cut-off　edge　at　1050　nm)　has　been　detected　based　on　the　large　Au/MoSe2　sensitive　Schottky　interface　internal　photoemission.　As　a　result,　a　universal　strategy　for　the　sub-bandgap　near-infrared　van　der　Waals　Schottky　junction　detector　of　2D　materials　was　obtained.