Silicon　carbide　(SiC)　metal　oxide　semiconductor　field-effect　transistors　(MOSFETs)　are　susceptible　to　unexpected　short-circuit　(SC)　impacts　in　high-voltage　inverters　operating　in　complex　applications.　This　paper　presents　a　research　on　the　effect　of　high-side　blocking　and　classical　low-side　blocking　on　short　circuit　characteristics.　Simulation　of　the　steady-state　electric　field,　which　equivalent　to　the　states　after　LSB　and　HSB,　was　performed.　The　obvious　electric　field　concentration　appears　in　the　source-drain　pn　junction　of　the　DUT　after　the　LSB,　and　is　much　larger　in　value　than　that　appearing　in　the　DUT　after　the　HSB.　DUTs,　which　failed,　were　decapsulated　from　the　side　of　the　drain　to　allow　for　an　emission　microscope　(EMMI)　investigation.　In　response　to　the　results　of　the　EMMI　investigation,　it　was　discussed　that　the　occurrence　of　source　leakage　was　caused　by　electric　field　con-centration　after　the　DUT　is　blocked.　The　hazards　of　this　failure　and　the　expected　further　research　are　mentioned　simply.