One　of　the　most　attractive　characteristics　of　diluted　ferromagnetic　semiconductors　is　the　possibility　to　modulate　their　electronic　and　ferromagnetic　properties,　coupled　by　itinerant　holes　through　various　means.　A　prominent　example　is　the　modification　of　Curie　temperature　and　magnetic　anisotropy　by　ion　implantation　and　pulsed　laser　melting　in　III-V　diluted　magnetic　semiconductors.　In　this　study,　to　the　best　of　our　knowledge,　we　performed,　for　the　first　time,　the　co-doping　of　(In,Mn)As　diluted　magnetic　semiconductors　by　Al　by　co-implantation　subsequently　combined　with　a　pulsed　laser　annealing　technique.　Additionally,　the　structural　and　magnetic　properties　were　systematically　investigated　by　gradually　raising　the　Al　implantation　fluence.　Unexpectedly,　under　a　well-preserved　epitaxial　structure,　all　samples　presented　weaken　Curie　temperature,　magnetization,　as　well　as　uniaxial　magnetic　anisotropies　when　more　aluminum　was　involved.　Such　a　phenomenon　is　probably　due　to　enhanced　carrier　localization　introduced　by　Al　or　the　suppression　of　substitutional　Mn　atoms.